Abstract
We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Förster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films. © 2007 American Institute of Physics.
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Sponsors: Austrian Research Centers (ARCS)
Infineon
Austrian Fed. Minist. Educ., Sci. Cult. (BMBMWK)
FFG
Austrian Nano Initiative
Cited By :1