Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Other

Peer reviewed

M. H. Hadj Alouane, Nicolas Chauvin, H. Khmissi, K. Naji, B. Ilahi, H. Maaref, G. Patriarche, M. Gendry and C. Bru-Chevallier

Nanotechnology, Vol.24(3), pp.035704-035704

Institute of Physics

25/01/2013

PMID: 23262659

Abstract

Condensed Matter

Materials Science

Physics

International audience

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Title: Excitonic properties of wurtzite InP nanowires grown on silicon substrate
Creators - without role: M. H. Hadj Alouane
Nicolas Chauvin
H. Khmissi
K. Naji
B. Ilahi
H. Maaref
G. Patriarche
M. Gendry
C. Bru-Chevallier
Publication Details: Nanotechnology, Vol.24(3), pp.035704-035704
Publisher: Institute of Physics
Identifiers: 9919113808331
Academic Unit: Northern Borders University
Language: English
Resource Type: Other