Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements

Other

J. Gyani, S. Soliverès, Frédéric Martinez, M. Valenza, C. Le Royer, E. Augendre, K. Romanjek and Charlotte Drazek

2009 10th International Conference on Ultimate Integration of Silicon, pp.87-90

IEEE

18/03/2009

Abstract

Electronics

Engineering Sciences

International audience

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Title: Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements
Creators - without role: J. Gyani - University of Montpellier
S. Soliverès
Frédéric Martinez
M. Valenza
C. Le Royer
E. Augendre
K. Romanjek
Charlotte Drazek
Publication Details: 2009 10th International Conference on Ultimate Integration of Silicon, pp.87-90
Publisher: IEEE
Identifiers: 9918691708331
Academic Unit: Majmaah University
Language: English
Resource Type: Other