Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings

W. Ouerghui; A. Melliti; M. A. Maaref; Juan Pascual Martínez Pastor; J. Gomis; Daniel Granados; Jorge Manuel García Martínez

doi:10.1016/j.msec.2005.10.046

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Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings

W. Ouerghui, A. Melliti, M. A. Maaref, Juan Pascual Martínez Pastor, J. Gomis, Daniel Granados and Jorge Manuel García Martínez

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol.26(2), pp.297-299

Elsevier

01/03/2006

DOI: https://doi.org/10.1016/j.msec.2005.10.046

Abstract

Photoluminescence

Quantum rings

Vertical stack

3 páginas, 3 figuras. We present a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE). Photoluminescence (PL) experiments show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness (thinner thickness). If the spacer thickness is further reduced, a strong coupling between the nanostructures is produced and the signal shifts to low energy. Peer reviewed

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Title: Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings
Creators - without role: W. Ouerghui - Institut Préparatoire aux Études d'Ingénieurs de Monastir
A. Melliti - Institut Préparatoire aux Études d'Ingénieurs de Monastir
M. A. Maaref - Institut Préparatoire aux Études d'Ingénieurs de Monastir
Juan Pascual Martínez Pastor
J. Gomis - Universitat de València
Daniel Granados - Microelectronica
Jorge Manuel García Martínez
Publication Details: MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol.26(2), pp.297-299
Publisher: Elsevier
Identifiers: 9928368208331
Academic Unit: Qassim University
Language: English
Resource Type: Other